Abstract
Recent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H–SiC in the dipole approximation are derived and the ionization energy for the N donor at hexagonal site is determined. Optical and electrical studies of the DI center reveal the pseudodonor nature of this defect. Defects in high-purity semi-insulating (SI) SiC substrates including the carbon vacancy (VC), silicon vacancy (VSi), and (VC−CSi) pair are studied. The annealing behavior of these defects and their role in carrier compensation in SI 4H–SiC are discussed.
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