Abstract

ABSTRACTExcimer laser light has been used to achieve the maximum growth rate of GaAs in a chemical beam epitaxy system when temperatures were more than a hundred degrees below the normalgrowth temperature. Secondary electron and transmitted electron microscopy of material grown using laser assistance shows the presence of surface ripples aligned with crystallographic directions. Layers grown at the lowest temperatures using a high fluence of excimer laser light contain a high density of small dislocation tangles (>1011 cm-−2 ). Lower fluences have no effect on the microstructure of the material.

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