Abstract
AbstractHigh quality ZnO single crystals of dimensions 10 x 10 x 0.5 mm3, grown by a hydrothermal approach, have been implanted by 40 keV N+ ions to a fluence of 1 x 1015 cm–2 at room temperature. Their properties revealed by positron annihilation and Hall effect measurements are given in the as‐grown and as‐irradiated states, and after post‐implantation annealing in an oxygen ambient at 200 °C and 500 °C. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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