Defects in Mg-Doped InP and GaInAs Grown by Omvpe

Abstract

ABSTRACTWe report on the defects present in doped InP and GaInAs grown by organometallic vapor phase epitaxy (OMVPE). The material was grown in an atmospheric pressure system using group III trimethyl sources, arsine and phosphine. Bis(cyclopentadienyl) magnesium (Cp2Mg) was present as a p-type source of magnesium. Defects in as-grown material were characterized using photoluminescence (PL), Hall-effect, and deep level transient spectroscopy (DLTS). Various levels of Mg doping were investigated, ranging from 5 × 1015 to 1 × 1019 cm−3. Radiative defects were observed at 77 K corresponding to PL emission from conduction band/shallow donor to acceptor levels including emission at 1.37 eV identified as the shallow hydrogenic acceptor, and emission lines at 1.3 eV and 1.0 eV in heavily doped material. Corresponding hole traps in InP:Mg were observed by DLTS having thermal activation energies of 0.20 and 0.40 eV, the 0.40 eV trap being the dominant defect in p-type InP. In GaInAs grown near lattice-matched to InP, radiative emission is also observed from deep centers 100 meV from band edge emission. This emission is observed to be related to lattice-mismatch of the ternary with the InP, and is found to be accentuated and broadened in GaInAs doped with Mg.