Abstract
GaAs grown by molecular beam epitaxy (MBE) at 300 °C is annealed at 800 °C and optical properties are studied using photoluminescence spectroscopy (PL) and infrared-absorption spectroscopy. Three kinds of defects are observed. One of them is attributed to gallium vacancies with an energy level at 0.3 eV above the valence-band edge. The concentration of gallium vacancies is increased by the high-temperature annealing. The GaAs can render inactive free electrons of 1.3×1018 cm−3 even after annealing at 800 °C for 10 min.
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