Abstract
AbstractWe review our recent experimental results on important grown-in non-radiative defects in Si and SiGe/Si heterostructures grown by molecular beam epitaxy (MBE) at low temperature. Several types of such defects have been revealed by the optically detected magnetic resonance technique and were shown to play an important role in carrier recombination. Among them a dominant defect is identified to be the vacancy-oxygen (V-O) complex. Experimental evidence on the formation mechanisms of these non-radiative defects points at a low surface adatom mobility during low temperature growth as a major cause, and also ion bombardment as occurs e.g. during potential enhanced doping. Based on the gained knowledge, educated attempts by post-growth hydrogen and thermal treatments have been made to remove these harmful defects and to improve the radiative efficiency of the material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
