Abstract
A diamond film was deposited using a two-step process in which nitrogen is added during the second step. We compare the defects in {0 0 1} and {1 1 1} growth sectors from the two-steps: dislocation loops found in {0 0 1} growth sectors of the first step disappear in {0 0 1} growth sectors with N-doping, whereas the density of planar defects in {1 1 1} growth sectors strongly increases. It is suggested that N-doping stops vacancies from aggregating to form dislocation loops or vacancy clusters.
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