Abstract
Charge Transport A combination of optical, electric, and thermal spectroscopy tools shed light on the ground-breaking interaction of defects with free charges in halide perovskite optoelectronic devices. For the first time, in article number 2104467, Artem Musiienko and co-workers demonstrate the effect of defects on diffusion length, lifetime, and mobility of holes and electrons separately. Advanced characterization of charge transport and defects can stimulate new device architectures and material modification pathways.
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