Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p +-n photodiode structure formation

Abstract

The impurity-defect structure of heteroepitaxial CdxHg1 − xTe/Si (0.35 < x < 0.39) layers grown by molecular beam epitaxy for the creation of arsenic-ion-implanted p+-n junctions has been studied by the photoluminescence method. It is established that full realization of the possibilities of p+-on-n photodiode structures based on the CdHgTe/Si system is hindered by uncontrolled doping of the material that leads to the formation of both shallow (impurity level energy ∼10 meV) and deep (∼50 meV) acceptor levels.