Abstract
AbstractGermanium doping of Czochralski (CZ) silicon has attracted attention in recent years. It is pointed out that germanium doping can result in denser voids with small size, which can be eliminated easily by annealing at high temperature, and may improve the gate oxide integrity (GOI) of semiconductor devices. Meanwhile, oxygen precipitation in CZ silicon can be enhanced by germanium, so that the internal gettering (IG) ability of wafers is improved. In addition, it is reported that germanium can suppress the formation of thermal donors (TDs). Thus, it is believed that the germanium‐doped CZ (GCZ) silicon can be used as the substrate of ultra‐large scale integrated (ULSI) circuits, which have the high quality subsurface layer, the high IG ability, and the stable electrical property. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
