Abstract
Positron annihilation has been used to study defects induced by 1 MeV electron irradiation in cubic silicon carbide (3C-SiC) epitaxially grown on Si substrates by chemical vapor deposition. Narrowing of the Doppler-broadened energy spectrum of annihilation gamma-rays by the electron irradiation was observed in the fluence range above 5 × 1016 e/cm2. The electron fluence dependence of the narrowing is accounted for by the introduction of monovacancies and divacancies in 3C-SiC by the irradiation.
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