Abstract
Defects in electron-irradiated 6H-SiC diodes have been studied by single alpha particle induced charge transient spectroscopy and deep level transient spectroscopy (DLTS) in order to identify critical defects responsible for the charge collection efficiency (CCE) decreased by high-energy electron irradiation. The defect X2 detected by the charge transient spectroscopy and the electron trap Ei detected by the DLTS had a similar activation energy of around 0.50 eV. In addition, the annealing at 200oC completely removed defects X2 and Ei, and restored the CCE. The defect X2 is attributed to the electron trap Ei, and responsible for the decreased CCE.
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