Abstract
The photocarrier dynamics in pure nonhydrogenated amorphous silicon (a-Si) have been studied with subpicosecond resolution using pump-probe reflectivity measurements. The photocarrier lifetime increases with the annealing temperature from 1 ps for as-implanted a-Si to 11 ps for a-Si annealed at 500 °C. The lifetime in annealed a-Si can be returned to the as-implanted level by ion irradiation. These observations indicate that a-Si can accommodate a variable number of defect-related trapping and recombination centers. The saturated defect density in as-implanted a-Si is estimated to be ≊1.6 at. %. Comparison with Raman spectroscopy suggests that various kinds of structural defects are present in a-Si.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
