Abstract
Epitaxial overlayers of (100)CdHgTe (CMT) have been grown on (100)CdTe/(100)GaAs hybride substrates by MOCVD technique. The surface, bulk and interface defects in (100)CdTe epilayers on (100)GaAs substrates were examined by scanning electron microscope (SEM), backscattered electron image, X-ray diffraction, photoluminescence, photoinduced current transient spectroscopy (PICTS) and transmission electron microscopy (TEM). The relationship between these defects and the properties of CMT overlayers was discussed.
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