Abstract
We prepared porous SiGe layers by anodic etching from epitaxial SiGe layers of 5 and 20% Ge content and of two different doping concentrations (p, p+). Their morphology was investigated by electron microscopy and electron paramagnetic resonance. The structural analysis reveals for the p and p+ material a pore structure very similar to the case of porous Si. The electron paramagnetic resonance measurements show for the high porosity SiGe layers after 300 °C oxidation the presence of SiPb centres, which proves the monocrystalline character of the porous layers. In addition Ge dangling bond defects are observed; they are ascribed to Ge precipitates at the oxide interface. The SiGe layers with a porosity higher than 60% show efficient red room-temperature photoluminescence (PL). The maximum of the PL is centred at 1.8 eV with a half width of about 0.4 eV. Time resolved PL spectra reveal lifetimes for this red PL in the 100 ns range, decreasing with increasing Ge concentration.
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