Abstract
The effect of defects (dangling Si-Si bonds) produced during the deposition of a-Si:H films by the glow-discharge method and upon boron doping, as well as photoinduced defects, on changes in the short-and medium-range order in the structural network is investigated. It is shown for a constant defect density ND=const that charged defects influence the a-Si:H structure much more strongly than do neutral defects.
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