Abstract
Aluminum nitride (AlN) ceramic is a wide-gap semiconductor, which has a variety of native defects, in particular oxygen-related complexes. We have doped Si into AlN by gas pressure sintering (GPS) and investigated the influence of Si on the defects and luminescence of AlN. It was found that O impurities were reduced until 1.6% Si-doping, and then Si is incorporated into AlN by further doping. These mechanisms and related electrical and optical changes have been discussed.
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