Abstract

Diffusion and point defects in silicon materials.- Density functional modeling of defects and impurities in silicon materials.- Electrical and optical defect evaluation techniques for electronic and solar grade silicon.- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt.- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells.- Oxygen precipitation in silicon.- Defect characterization by electron beam induced current and cathode luminescence methods.- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators.- Defect Engineering in silicon materials.

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