Defect-centric perspective of combined BTI and RTN time-dependent variability

Abstract

This paper describes the implications of time-dependent threshold voltage variability, induced by Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN), on the reliability and performance of advanced technology nodes. Investigation of time-dependent variability at the individual trap level, e.g. in production environments, is not feasible with approaches such as single device measurements developed in the academic literature. Nonetheless, nFET and pFET time-dependent variability, in addition to standard time-zero variability, can be fully characterized and projected using a series of measurements on a large test element group. The statistical distributions encompassing both BTI and RTN variability and their correlations are discussed from a defect-centric perspective.