Defect tolerant device geometries for lead-halide perovskites

Basita Das,Thomas Kirchartz,Zhifa Liu,Irene Aguilera,Uwe Rau

doi:10.1039/d0ma00902d

Basita Das, Thomas Kirchartz + Show 3 more

Open Access

https://doi.org/10.1039/d0ma00902d

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Abstract

Device geometries yielding asymmetric carrier concentration together with asymmetric defect capture coefficients limits defect mediated recombination.

Highlights

Whether a defect causes substantial recombination depends on the density and energetic position of defects and on the availability of electrons and holes to be captured by these defects
All photovoltaic device simulations presented here, were performed using the Advanced Semiconductor Analysis (ASA) software,[84,85] an integrated opto-electronical tool developed by the Photovoltaic Materials and Devices group at TU Delft
The capture rates depend on the relative concentrations of electrons and holes and thereby on the device geometry and the electrostatics of the solar cell

Summary

Introduction

Whether a defect causes substantial recombination depends on the density and energetic position of defects and on the availability of electrons and holes to be captured by these defects. The electron and hole emission coefficients en and ep depend on the respective capture coefficients and the position of the quasi-Fermi level splitting given by the typical operating conditions of the device.[56] Recombination efficiency is affected by the combined properties of the device geometry and the nature of the defects.

Results

Conclusion