Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si 1− yC y in silicon

Abstract

We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing conditions of 650–800 °C. This is achieved by incorporating a layer of epitaxially grown Si 1− y C y layer, strategically located at the end-of-range (EOR) of the implant profile. An indium implant of 115 keV at 1 × 10 14 cm − 2 was performed followed by annealing at temperature ranges of 650–800 °C. Samples with the Si 1− y C y layer revealed the elimination of secondary EOR defects with effectively suppressed indium transient enhanced diffusion (TED), indicating the function of carbon as an efficient sink for silicon interstitials at reduced annealing temperatures, in the SPER dopant activation regime.