Abstract
Abstract Hole diffusion lengths ( L p ) of 2.6 μm have been obtained in bulk ( 1 × 10 17 cm −3 doped) GaAs specimens by using a simple process involving annealing at 950 °C in evacuated quartz ampoules. Increases in L p of factors of 2 – 3 have been observed in both tellurium-doped liquid encapsulated Czochralski and silicon-doped horizontal Bridgman material subjected to such treatment. These increases in L p have been found to result in substantial increases in current collection in electrochemical test cell structures (26% increase for white light illumination, 65% increase for sub-bandgap illumination). Studies of the changes in defect structure which result from the anneals have shown that two defects, HCX ( E v + 0.29 eV ) and HCZ ( E v + 0.57 eV ), are effective recombination centers in n-type GaAs.
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