Abstract
We report on defect spectroscopy on Cu(In,Ga)Se2 based solar cells with varying gallium content. Our investigations using deep level transient and admittance spectroscopy do not reveal a pronounced qualitative difference in the defect spectra for the case of absorbers containing indium and gallium. Therefore, we conclude that there exists no detrimental defect in the bulk material that generally prohibits one to achieve an increase in efficiency even for solar cells based on absorbers with a gallium to gallium plus indium ratio (GGI) larger than 0.3. The boundary compositions with CuInSe2 and CuGaSe2 absorbers (i.e., GGI=0 and GGI=1, respectively) show additional trap signals. Additionally, a peak width analysis was performed for two defect signals that occur for all absorber compositions. The relative peak width was found to be independent of GGI whereas the activation energies show some correlation with the gallium content of the absorber layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
