Abstract
We report on defect spectroscopy on Cu(In,Ga)Se2 based solar cells with varying gallium content. Our investigations using deep level transient and admittance spectroscopy do not reveal a pronounced qualitative difference in the defect spectra for the case of absorbers containing indium and gallium. Therefore, we conclude that there exists no detrimental defect in the bulk material that generally prohibits one to achieve an increase in efficiency even for solar cells based on absorbers with a gallium to gallium plus indium ratio (GGI) larger than 0.3. The boundary compositions with CuInSe2 and CuGaSe2 absorbers (i.e., GGI=0 and GGI=1, respectively) show additional trap signals. Additionally, a peak width analysis was performed for two defect signals that occur for all absorber compositions. The relative peak width was found to be independent of GGI whereas the activation energies show some correlation with the gallium content of the absorber layer.
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