Abstract
Defect Study on Si Implanted with B and BF<sub>2</sub> Ions by Coincidence Doppler Broadening Measurements
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https://doi.org/10.4028/www.scientific.net/msf.363-365.469
Journal: Materials Science Forum | Publication Date: Apr 2, 2001 |
Citations: 3 |
Defect Study on Si Implanted with B and BF<sub>2</sub> Ions by Coincidence Doppler Broadening Measurements
Join us for a 30 min session where you can share your feedback and ask us any queries you have