Abstract
We have performed defect studies on Ti 1N 1.07 by means of thermal helium desorption spectrometry (THDS), a technique which uses helium as an inert atomic probe. First, the defects in the solid are decorated with helium by ion implantation. The helium is subsequently released as the sample is heated. For low ion implantation energy (100 eV) one desorption peak is dominant, which represents structural vacancies on the Ti sublattice due to the off-stoichiometry. For implantation energies of 400 eV and higher, the ion beam induces new. strongly binding trapping sites for helium, which become increasingly prominent in the spectra. These spectra can be well understood on the basis of a trapping and retrapping theory of helium in two types of defects.
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