Abstract
IntroductionOne of the requirements for low-cost silicon solar cells is that the silicon substrates be relatively inexpensive (compared to standard Czochralski and float-zone wafers). This requirement has led to the development of a number of techniques for growing silicon ‘ribbons’, e.g. edge defined film-fed growth (EFG), silicon-on-ceramic (SOC), ribbon-to-ribbon (RTR) and dendritic web. Details of these and other growth techniques can be found in ref. Most of the growth methods produce silicon ribbons which contain relatively high densities of structural defects, such as grain boundaries, twin boundaries and dislocations. In addition, small amounts of chemical impurities are introduced into the ribbons during growth from sources such as shaping dies (EFG), substrates (SOC, RTR), heat shields, etc.
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