Defect structures of ion-implanted ?-tin

Abstract

Single crystalline and polycrystalline α-tin has been implanted at room temperature with 80-keV ions of radioactive119mSn,119Sb, and119mTe. The radioactive nuclei decay to the Mossbauer level of119Sn. Mossbauer spectra of the emitted 24-keV γ radiation have been measured for different source temperatures by resonance counting techniques. Five individual lines in the spectra are characterized mainly by their isomer shifts and Debye temperatures. From these parameters the radiogenic119Sn atoms are concluded to be located in regular substitutional and interstitial lattice sites and in defect complexes. Simple models for the defects are proposed: A Sn-vacancy pair consists of Sn atoms on (nearly) substitutional sites with a dangling bond into an adjacent vacancy. In a complex oxygen-containing defect the Sn atoms have approximately a 5s2 configuration withp-bonds to two nearest neighbour atoms. Sn atoms, having an atomic 5s2 5p2 configuration and large vibrational amplitudes, are concluded to be in non-bonding regular interstitial sites. For special implantation conditions minor fractions of SnO2 molecules are formed in the bulk. The interstitial119Sn and the119Sn-vacancy pairs are proposed to represent elementary point defects in α-tin. Conclusions are also drawn concerning the lattice location and the defects created in the implantation process of the implanted parent isotopes.