Abstract
Effects of growth temperature and Si doping on the formation of vacancy defects in molecular beam epitaxy GaCrN films have been studied by positron annihilation spectroscopy. No vacancy defects were detected in the GaCrN films grown at 700oC. In the undoped GaCrN film grown at 540oC, vacancy clusters with sizes of V8 to V12 were responsible for positron trapping. Vacancy clusters were much reduced by Si doping, but complexes related to nitrogen vacancies still survived.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
