Defect Structure of Doped Lead‐Free 0.9(Bi0.5Na0.5)TiO3−0.1(Bi0.5K0.5)TiO3 Piezoceramics

Abstract

Cu‐ and V‐doped BNKT10‐based piezoelectric ceramics with up to 0.5 at.% dopant concentration were synthesized and displayed more homogeneous grain growth compared to undoped BNKT10 ceramics. The defect chemistry and defect structure, studied by X‐ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR), indicate a slightly rhombic electronic environment with major unidirectional octahedral distortion of the local environment of Cu. The solubility limit of Cu2+ in this material system is lower than 0.05 at.% Cu; above this limit, a Cu segregation at the grain boundaries is prevalent, unlike in PZT and KNN. Here, V was shown to be incorporated into the perovskite lattice and possess oxidation states of +4 and +5, acting both as isovalent and donor dopant, predominantly compensated by A‐site vacancies. A trend toward higher ceramic densities, higher maximum polarization, and higher remanent polarization with increasing Cu concentration was observed. A maximum mechanical coupling factor could be obtained in the case of doping with 0.4 at.% V and 0.1 at.% Cu with a planar coupling of 0.19 and a thickness coupling factor of 0.56.