Abstract
Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of CdxHg1 − xTe films grown by liquid-phase epitaxy. The films contain neutral defects supposedly associated with tellurium nanoinclusions. Ion treatment electrically activates these defects, with a high concentration of donor centers (∼1017 cm−3) created in the films. These defects decompose in ∼103 min of aging at room temperature. Then the properties of the material are determined by the concentration of residual donors, which is found to be very low (down to ∼1014 cm−3) for the films under study.
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