Abstract
An investigation on the ferroelectric and dielectric properties of donor-doped (vanadium, niobium) Sr2Bi4Ti5O18 ceramics was presented. Compared with the undoped ceramics all the donor-doped ceramics had obviously increased 2P r . Three obvious peaks (P1, P2, P3) on the dielectric loss curve D(T) were observed. One peak which was just a few degrees below the Curie point and ascribed to viscous motion of domain walls declined drastically with vanadium doping. And the decline may result from the increase in grain size, which resulted in a large 2P r . With niobium doping the relaxation peaks P1 and P2 related to point defects declined gradually. Therefore, the increase in 2P r of Sr2Bi4Ti5O18 upon niobium doping might relate to the significant weakening of defect pinning.
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