Abstract
AbstractThe application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed. An array of perturbation techniques are described which allow direct determination of electronic and atomic structure, as well as electrical and physical properties. The methods are illustrated with silicon materials studies of the divacancy using Polarized Excitation Photocapacitance, the oxygen donor using Stress and Electric Field Modulated DLTS, dislocations using spatially resolved DLTS, and iron impurities employing Charge State Control of Structure.
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