Abstract
We study defect states in undoped and Eu 3+-doped Lu 3Ga x Al 5− x O 12 ( x = 0–5) garnet crystals by wavelength resolved thermally stimulated luminescence above room temperature. Eu 3+ ions act not only as recombination centres but also as high temperature traps, as testified by the presence of a TSL peak at 450 °C correlated with Eu 3+-doping. With increasing gallium content all glow peaks are shifted to lower temperatures. This trend is confirmed also for powder samples prepared by sol–gel technique. The observed low temperature shift of the glow peaks can be considered as a consequence of the band gap reduction following the increase of Ga 3+ concentration. The comparison with the glow curve of a Ce 3+-doped crystal is also shown.
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