Abstract
Unexpected excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with recombination through defects originated from the formation of QDs. The instabilities are connected with unstable occupation of energy levels induced by the above defects, which depend on temperature and on the current level. Excess currents have also been obtained in annealed AlGaAs/GaAs structures. These excess currents exhibited memory effect, which was probably connected with formatin of defects during annealing.
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