Defect Reduction and Improved Device Performance using Rapid Isothermal Diffusion in Silicon

Abstract

ABSTRACTQuantum photoeffects associated with photons of wavelength less than 0.8 micron lead to higher bulk and surface diffusion coefficients. We have exploited this fundamental property in designing rapid isothermal processing (RIP) systems for shallow junction formation in silicon. A detailed comparative study of diffusion, metallization and CVD with and without high energy photons has been carried out. The results show that microscopic defects, cycle time and processing temperature is lower than what can be achieved byconventional methods is realized by using photons in the ultra violet (UV) and vacuum ultra violet (VUV) spectrum.