Defect properties of multilayer GaP/Si nanoheterostructures grown by plasma deposition

Abstract

Periodic nanoheterostructures GaP/Si grown by PE-ALD with argon plasma treatment on GaP wafers were studied by capacitance methods. The response from silicon quantum well was clearly observed by capacitance-voltage characteristics as peak on profile of concentration of free charge carriers in sample GaP (50 cycles)/Si (22 s) with 7 wells. It is explained by higher doping of GaP layers due to higher total time of silane flow in growth process unlike samples with smaller numbers of silicon wells or lower time of silicon deposition. Further, response from defect level was observed with capture cross-section (1–10)×10−15 cm−2, and its energetic level decreases from 0.51 eV to 0.39 eV under conduction band with increasing of total time of silane flow.