Abstract
Defects in as-grown undoped and tellurium-doped gallium antimonide were studied using positron lifetime and coincidence Doppler broadening measurements. The grown-in defects in these samples were supposed to be Ga vacancy (VGa)-related defects. More VGa-related defects were introduced into undoped and lightly Te-doped GaSb after electron irradiation at the doses of 1.0 × 1017 cm−2 and 1.0 × 1018 cm−2; however, in the heavily Te-doped GaSb, electron irradiation led to partial recovery of VGa. The role of Te content in the defect evolution is also discussed.
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