Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam

Abstract

Vacancy-type defects in 150-keV P+-implanted SiO2 (43 nm)/Si(100) specimens were studied by a variable-energy positron beam. The results show that the damaged layer induced by P+-implantation extends far beyond the stopping range of phosphorus ions. From isochronal annealing experiments, it was found that oxygen atoms recoiled from the SiO2 layer into the Si substrate, forming stable oxygen-vacancy complexes in the substrate near the interface. The final recovery of vacancy-type defects was observed at 1200°C.