Abstract
Accumulation of defects during energetic ion irradiation below ∼10 K in platinum thin films is studied by electrical resistivity measurements. Experimental results are analyzed by using a model which describes the production and selective radiation annealing of defects. For high-energy (∼100 MeV) heavy ion irradiations, radiation annealing process due to electronic excitation is found mainly at the initial stage of irradiation. From the defect accumulation curve and defect recovery spectra, the effective temperature corresponding to the lattice agitation induced by electronic excitation is estimated.
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