Abstract
A novel method is applied to investigate the as-implanted defect structure formed during keV implantation into Si. It uses a combination of time-ordered computer simulations based on the binary collision approximation (BCA) and classical molecular dynamics (MD) simulations. The as-implanted damage created in 30 keV P/sup +/, 15 keV As/sup +/, and 15 keV B/sup +/ implants is analyzed and depth profiles of different defect species are given.
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