Abstract
Improvement in the performance of excimer laser annealed (ELA) poly-Si thin-film transistors was seen through ion implantation of N, O, or F prior to the ELA step. Devices passivated in this way show steeper subthreshold swings, higher carrier mobilities, and lower off current than unpassivated or hydrogen-passivated devices, even in a low thermal budget process. With the addition of a higher temperature anneal, the N passivated devices are superior both in terms of performance and reliability
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