Abstract
1 MeV electron irradiation has been performed in degenerate, n-type (n≂2×1017 cm−3), molecular beam epitaxial GaAs layers, and Hall effect measurements have been carried out during the irradiation in order to get accurate defect production data. The results have been fitted with statistical models, and are most consistent with the usual E1 (EC−0.045 eV) and E2 (EC−0.15 eV) levels being the (−/0) and (0/+) transitions of the As vacancy, respectively. Also, an acceptor well below EC−0.15 eV is produced at a much higher rate than that of E1 and E2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
