Abstract
A defect model proposed to explain the effect of titanium doping on the rate of sintering of Al/sub 2/O/sub 3/ is revised to fit the oxidizing conditions of the experiments. The model accounts for the observed change in sintering rate by a change from rate limitation by ions to rate limitation by electrons, but requires the presence of an unusually large concentration of acceptor impurities in the material. Models similar to the ones originally proposed account for the rate of densification of Al/sub 2/O/sub 3/:Zr by hot-pressing in vacuo, provided it is extended by including electronics defects.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
