Abstract

Photovoltaic solar cells based on thin-film cadmium telluride (CdTe) have emerged as a potential contender in terms of efficiency in comparison to multi-crystalline silicon solar cell technology. The record efficiency presented in literature is reported to be as high as 22%.However, the theoretical approach suggests that the efficiency of up-to 25% can be achieved through these solar cells. The one of the main factors that affect the efficiency of the solar cells is the open circuit voltage (Voc) and the maximum Voc for CdTe solar reported was about 600 mV. Thus, In order to increase the Voc we have intentionally drifted the external voltage bias of 700 mV, 800 mV, 900 mV and 1000 mV to the active layer of CdTe based solar cell and see the physical impact of native defects in form of trapped charges that are actually responsible for limitation of lower open circuit voltage. For this, we have used the diagnostic technique known as Charge Deep Level Transient Spectroscopy (Q-DLTS) under dark and luminous conditions at different values of ambient temperatures and external bias potential. We have experimentally investigated that there exist high recombination trap centers located at 0.448 eV, 0.383 eV, 0.366 eV and 0.341 eV within the energy band gap of CdTe which hinder us to obtain the theoretical limits of Voc.

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