Defect levels in high energy heavy ion implanted 4H-SiC

Abstract

Present work investigates defect levels in Ni/4H-SiC Schottky diode implanted with 200 MeV Ag14+ ions at a fluence of 1×1012 ions/cm2, employing deep level transient spectroscopic technique. In pristine diode, two defect levels below conduction minimum, i.e., Ec-0.10 eV and Ec-0.24 eV are found which are attributed to nitrogen impurity and carbon interstitial related effects. However, after ion implantation, five defects, i.e., Ec-0.14, Ec-0.15, Ec-0.24, Ec-0.29 and Ec-0.65 eV are observed. The defect level present at Ec-0.24 eV is found to be the most stable, which holds its consistency even after high energy heavy ion implantation. Moreover, the impact of formed defects on the electrical parameters of the fabricated device is discussed.