Abstract
The synthesis of silicon nanowires by Ga-assisted plasma enhanced chemical vapor deposition (PECVD) has been recently demonstrated. In the present work, we study in detail the structural characteristics of the synthesized nanowires. High resolution transmission electron microscopy (HRTEM) analysis reveals the existence of various types of structural defects, which can be classified mainly according to the orientation into axial twins, lateral twins, and transverse twins. We compare our results with previous studies of Si nanowires synthesized with other catalyst metals. Understanding both the origin and the effects of the observed defects is important for technological applications. The presence of twinned domains changes locally the structure of the material. As a consequence, one should find a different local density of states and band gap, which should result in a variation of the carrier transport and optical properties of the nanowires.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
