Abstract
Spherical Si solar cells are fabricated using polycrystalline Si spheres with a diameter of 1 mm produced by a high-speed dropping method. The distribution and types of electrically active defects in spherical Si solar cells have been directly characterized using electron-beam-induced current (EBIC) and transmission electron microscopy (TEM). Many recombination sink areas in grains and grain boundaries can be directly observed with EBIC in low-efficiency cells. The electrically active defects in grains are stronger recombination sinks than grain boundaries. The electrically active defect areas confirmed using EBIC were selectively etched with a Dash etching solution. TEM images revealed that the area showed a high dislocation density. These results suggest that the dislocations in grains deteriorate the performance of spherical Si solar cells.
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