Abstract
AbstractDefect engineering principles are integral to the design and manufacture of high-quality CCD image sensors. As examples, we describe the use of epitaxial silicon for defect control, hydrogen passivation of interface defects, and several forms of impurity gettering. The high sensitivity of image sensors to contaminants reveals that boron segregation gettering of iron dominates gettering by oxygen precipitates for both fast and slow cooling cycles. We estimate that the gettering efficiency for iron is 99.95%.
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