Defect-driven localization crossovers in MBE-grown La-doped SrSnO3 films

Abstract

Through systematic control of cation stoichiometry using a hybrid molecular beam epitaxy method, we show a crossover from weak to strong localization of electronic carriers in La-doped $\mathrm{SrSn}{\mathrm{O}}_{3}$ films on $\mathrm{LaAl}{\mathrm{O}}_{3}$(001). We demonstrate that substrate-induced dislocations in these films can have a strong influence on the electron phase coherence length resulting in two-dimensional to three-dimensional weak localization crossover. We discuss the correlation between electronic transport, and defects associated with nonstoichiometry and dislocations.