Abstract
Epitaxial films of Hg1−xCdxTe(MCT)were grown by Isothermal Vapor Phase Epitaxy(ISOVPE)without Hg overpressure on single crystalline substrates of CdTe and Cd0.96Zn0.04Te with(211)Cd and(211)Te crystallographic orientations. The chemical composition profile was determined using an electronic microprobe on the {110} preferential cleavage surfaces. Experimental values and data from the literature were used to calculate the percentage relative misfit and microhardness profiles. Both were correlated with the misfit dislocations distribution obtained at the interface of the films by chemical etching. The Zn doping in pure CdTe is related with the defect distribution at the film-substrate interface.
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